RIR Power Electronics Limited has received a major boost from the Government of Odisha for its upcoming Silicon Carbide (SiC) semiconductor manufacturing plant in Bhubaneswar. The Electronics & Information Technology Department of Odisha, through the Odisha Computer Application Center (OCAC), has approved fiscal support for Phase 1 of the project, enabling pro-rata disbursement of the capital subsidy.
This subsidy follows the facility’s prior clearance by the State-Level Single Window Clearance Committee (SLSWCC), reaffirming the state’s commitment to becoming a hub for high-power semiconductor manufacturing.
The total investment for the project, spanning Phase 1 and Phase 2, is estimated at ₹618 crore. Phase 1 will involve a capital expenditure of ₹65 crore, with the Odisha government providing an eligible subsidy of ₹32 crore.
Dr. Harshad Mehta, Chairman & Director of RIR Power Electronics, expressed gratitude towards the Odisha government, stating, “This forward-thinking support empowers us to introduce advanced technologies and manufacturing capabilities to the state. The development of this facility is a milestone for innovation, job creation, and energy-efficient solutions in electric vehicles, renewable energy, and power electronics across India.”
The new SiC semiconductor facility will focus on manufacturing high-power SiC MOSFETs, IGBTs, and diodes, with voltage ratings ranging from 3.3 kV to 20 kV. These components will cater to industries like electric vehicles (EVs), renewable energy, power grids, and industrial automation.
SiC semiconductors, known for their high performance and energy efficiency, will revolutionize power-based technologies, enhancing local manufacturing capacity and driving sustainable industrial growth across India.
The plant is aligned with India’s vision of advancing the “Make in India” initiative and is expected to make a significant contribution to the country’s semiconductor industry.
