As the global electric vehicle (EV) market surges, driven by growing adoption of battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs), electric models are expected to comprise approximately 45% of all vehicles produced by 2030—up from 20% in 2024 [1]. In response to this rising demand, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced a new generation of high-performance IGBT solutions designed specifically for high-voltage automotive systems.
Among the latest innovations are Infineon’s third-generation Electric Drive Train (EDT3) IGBT chips—engineered for both 400 V and 800 V systems—and RC-IGBT chips developed exclusively for 800 V systems. These advanced devices are designed to significantly improve the efficiency and performance of electric drivetrain systems, making them ideal for automotive applications.
The EDT3 and RC-IGBT bare dies are tailored for reliability and flexibility, allowing customers to create custom power modules. Compared to the previous EDT2 generation, the EDT3 chips deliver up to 20% lower total losses under high-load conditions while maintaining efficiency at low loads. This is achieved through innovations that reduce chip losses and increase the maximum junction temperature, resulting in extended vehicle range and lower energy consumption, contributing to a more sustainable and cost-effective driving experience.
“Infineon, as a leading provider of IGBT technology, is committed to delivering outstanding performance and reliability”, says Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon Technologies. “Leveraging our steadfast dedication to innovation and decarbonization, our EDT3 solution enables our customers to attain ideal results in their applications.”
The EDT3 chipsets, which are available in 750 V and 1200 V classes, deliver high output current, making them well-suited for main inverter applications in a diverse range of electric vehicles, including battery electric vehicles, plug-in hybrid electric vehicles, and range-extended electric vehicles (REEVs). Their reduced chip size and optimized design facilitate the creation of smaller modules, consequently leading to lower overall system costs. Moreover, with a maximum virtual junction temperature of 185°C and a maximum collector-emitter voltage rating of up to 750 V and 1200 V, these devices are well-suited for high-performance applications, enabling automakers to design more efficient and reliable powertrains that can help extend driving range and reduce emissions.
“Infineon, as Leadrive’s primary IGBT chip supplier and partner, consistently provides us with innovative solutions that deliver system-level benefits,” said Dr. Ing. Jie Shen, Founder and General Manager of Leadrive. “The latest EDT3 chips have optimized losses and loss distribution, support higher operating temperatures, and offer multiple metallization options. These features not only reduce the silicon area per ampere, but also accelerate the adoption of advanced packaging technologies.”
The 1200 V RC-IGBT elevates performance by integrating IGBT and diode functions on a single die, delivering an even higher current density compared to separate IGBT and diode chipset solutions. This advancement translates into a system cost benefit, attributed to the increased current density, scalable chip size, and reduced assembly effort.
Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK Drive G2 automotive power module, delivering enhanced performance and capabilities across the module portfolio. This module offers a power range of up to 250 kW within the 750 V and 1200 V classes, enhanced ease of use, and new features such as an integration option for next-generation phase current sensors and on-chip temperature sensing, contributing to system cost improvements.
All chip devices are offered with customized chip layouts, including on-chip temperature and current sensors. Additionally, metallization options for sintering, soldering and bonding are available on request.
Availability
The new EDT3 and RC-IGBT devices are already available for sampling. Further information is available at www.infineon.com/edt3.
[1] Infineon estimates
1 Comment
Good https://shorturl.at/2breu